NPN silicon transistor for high speed switching applications.
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Collector Emitter Voltage Max: 40V
• Transition Frequency: 300MHz
• Continuous Collector Current: 800mA
• Power Dissipation Pd: 400mW
• Power Dissipation: 400mW
• DC Collector Current: 800mA
• DC Current Gain hFE: 35hFE
• Transistor Mounting: Through Hole
• Transistor Case Style: TO-39
• No. of Pins: 3 pins
• DC Current Gain hFE Min: 35hFE
• Operating Temperature Max: 200°C
